Researchers at Belgium's Interschool Microelectronics (IMEC) and Ghent University recently demonstrated the first laser arrays that can grow as a single chip on 300mm wafers. Results published in the Nature Photonics journal discuss the integration of indium phosphide (InP) laser array monolithic chips directly on 300mm silicon substrates using CMOS pilot lines. This further incorporates a Photonic Integrated Circuit (PIC) where optical signal conversion supports chip or package optical interconnects between logic and memory chips. Indium phosphide semiconductor arrays were selectively grown on wafers of a pre-patterned oxide template using a reactor grown using a production-grade metalorganic vapor phase epitaxy (MOVPE) to achieve an indium phosphide waveguide array across a 300 mm substrate. The periodic shutter structures are then etched on the top of these waveguides to provide the optical feedback required for laser operation. Laser testing confirmed that all test equipment consisted of 10 layers of InP laser arrays. A typical laser threshold power of about 20 mW is observed at room temperature. The researchers also pointed out that small variations in laser performance along the array indicate that heteroepitaxy materials grow indium phosphide with high quality. By adjusting the shutter parameters, the researchers demonstrated their ability to accurately control the laser wavelength distribution across the array. The 300mm CMOS pilot line used in this study ensures a mass-produced path. Now researchers are investigating how to grow more complex stacks to enable laser and electron emission at 1,300 nm and to integrate silicon-based waveguide components. Compile: Susan Hong (Reference text: On-chip optical interconnects one step closer, by Julien Happich)
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